Nanostructured TiO2 cavitation agents for dual-modal sonophotocatalysis with pulsed ultrasound

Current sonochemical methods rely on spatially uncontrolled cavitation for radical species generation to promote chemical reactions. To improve radical generation, sonosensitizers have been demonstrated to be activated by cavitation-based light emission (sonoluminescence). Unfortunately, this process remains relatively inefficient compared to direct photocatalysis, due to the physical separation between cavitation event and sonosensitizing agent. In this study, we have synthesized nanostructured titanium dioxide particles to couple the source for cavitation within a photocatalytic site to create a sonophotocatalyst. In doing so, we demonstrate that site-controlled cavitation from the nanoparticles using pulsed ultrasound at reduced acoustic powers resulted in the sonochemical degradation methylene blue at rates nearly three orders of magnitude faster than other titanium dioxide-based nanoparticles by conventional methods. Sonochemical degradation was directly proportional to the measured cavitation produced by these sonophotocatalysts. Our work suggests that simple nanostructuring of current sonosensitizers to enable on-site cavitation greatly enhances sonochemical reaction rates.     

Low-field microwave absorption in pulse laser deposited FeSi thin film

Low field microwave absorption (LFMA) measurements at 9.4 GHz (X-band), were carried out on pulse laser deposited (PLD) polycrystalline B20 cubic structure FeSi thin film grown on Si (111) substrate. The LFMA properties of the films were investigated as a function of DC field, temperature, microwave power and the orientation of DC field with respect to the film surface. The LFMA signal is very strong when the DC field is parallel to the film surface and vanishes at higher angles. The LFMA signal strength increases as the microwave power is increased. The LFMA signal disappears around 340 K, which can be attributed to the disappearance of ferromagnetic state well above room temperature in these films. We believe that domain structure evolution in low fields, which in turn modifies the low field permeability as well as the anisotropy, could be the origin of the LFMA observed in these films. The observation of LFMA opens the possibility of the FeSi films to be used as low magnetic field sensors in the microwave and rf frequency regions.     

Ferromagnetism in noncompensated (Mn,Ga)-codoped ZnO films

Mn/Ga noncompensated codoped ZnO films were prepared on c-cut sapphire substrates via pulsed laser deposition. The structural, magnetic, transport, and optical properties of the films were then investigated. Addition of the Ga donor increases the electron concentration and enhances the magnetization in these films because of the net negative charge of the special noncompensated codoping, which can adjust the carrier concentration as well as the magnetic moment. Moreover, the Fermi level moves into the conduction band because of the increase in electron concentration, which results in an increase in the optical band gap value, from 3.28 eV for the undoped ZnO film to 3.61 eV for the (Mn,Ga)-codoped ZnO film.     

Structure and magnetic properties of γ′-Fe4N films grown on MgO-buffered Si (0 0 1)

γ′-Fe₄N thin films were grown on MgO-buffered Si (1 0 0) by pulsed laser deposition technique. Different crystallographic orientations and in-plane magnetic anisotropies were achieved by varying the growth temperature of the MgO buffer layer. When the MgO buffer layer was grown at room temperature, the γ′-Fe₄N film shows isotropic in-plane magnetic properties without obvious texture; while in-plane magnetic anisotropy was recorded for the γ′-Fe₄N films deposited on a 600 °C-grown-MgO buffer due to the formation of a (1 0 0)-oriented biaxial texture. Such a difference in in-plane magnetic anisotropy is attributed to the epitaxial growth of γ′-Fe₄N film on an MgO buffer with relaxed strain when the MgO layer was grown at a high temperature of 600 °C.     

基于超导储能脉冲变压器的多模块脉冲电源设计

为了探索一种更加紧凑的导轨型电磁推进基础实验用脉冲电源,以实验室现有高温超导储能脉冲变压器为单元模型,在单谐振电路脉冲成形方案的基础上,设计了环形结构的多模块脉冲电源,分析了环形结构中考虑互感的多模脉冲电源电路的充放电过程。通过对八模块环形结构脉冲电源进行仿真分析,得到了接近150kA的电流脉冲,原边电压限制13kV左右。可以得出,利用单谐振电路的多模块超导储能脉冲变压器并联放电方式,可以实现大电流脉冲的输出的要求,而且环形结构中各线圈存在的互感更有利于多模块脉冲电源。     

Ultrasonic degradation of butadiene, styrene and their copolymers

Ultrasonic degradation of commercially important polymers, styrene-butadiene (SBR) rubber, acrylonitrile-butadiene (NBR) rubber, styrene-acrylonitrile (SAN), polybutadiene rubber and polystyrene were investigated. The molecular weight distributions were measured using gel permeation chromatography (GPC). A model based on continuous distribution kinetics approach was used to study the time evolution of molecular weight distribution for these polymers during degradation. The effect of solvent properties and ultrasound intensity on the degradation of SBR rubber was investigated using different pure solvents and mixed solvents of varying volatility and different ultrasonic intensities.     

Crystallization and grain growth characteristics of yttria-stabilized zirconia thin films grown by pulsed laser deposition

Knowledge about the crystallization and grain growth characteristics of metal oxide thin films is essential for effective microstructural engineering by thermal post-annealing and the integration to Si-based miniaturized electroceramic devices. Finite size and interface effects may cause fundamentally different behavior compared to three dimensional macroscopic systems. This work presents a comprehensive investigation of the crystallization kinetics and microstructural evolution upon thermal post-annealing of amorphous 200 nm and 1.2 μm thin films of 8 mol% yttria-stabilized zirconia grown by pulsed laser deposition (PLD) using ex- and in-situ X-ray diffraction, Raman spectroscopy, and electron microscopy techniques. The layers exhibit a remarkably low crystallization temperature of 200-250 °C while exposure to energetic electrons induces the formation of randomly dispersed ~ 20 nm sized crystallites already at ambient temperature. The isothermal amorphous to crystalline phase transformation kinetics can be described quantitatively by the Johnson-Mehl-Avrami-Kolmogorov model. They reveal characteristics of a three dimensional growth under cation bulk diffusion control with heterogeneous nucleation that changes from continuous to instantaneous initial seeding at temperatures above 300 °C. Large (> 100 nm) equiaxed grains are formed rapidly without a stabilization of transient nanocrystals during the thermally induced phase transformation. A stagnation of normal grain growth resulting in a logarithmic normal size distribution is observed once the average grain dimensions approach the film thickness. The results on the crystallization and grain growth of the PLD-grown YSZ films are evaluated with regards to the fabrication of YSZ solid electrolyte membranes for Si-supported micro solid oxide fuel cells and gas sensors.     

Structural and optical properties of pulsed laser deposited SrBi2Nb2O9 thin films

SrBi₂Nb₂O₉ (SBN) thin films were prepared on fused quartz substrates at room temperature by pulsed laser deposition. The influence of deposition parameters such as target-to-substrate distance, oxygen pressure and annealing temperature on film crystallization behavior was investigated by X-ray diffraction. Results indicated that the films grown at the optimum processing conditions have polycrystalline structure with a single layered perovskite phase. The optical transmittance of the films prepared at various oxygen pressures was measured in the wavelength range 200–900 nm using UV–vis spectrophotometer. The results showed that there is a red shift in the optical absorption edge with a rise in the oxygen pressure. Refractive index as a function of wavelength and optical band gap of the films were determined from the optical transmittance spectra. The results indicated that the refractive index increases with increasing oxygen pressure at the same incident light wavelength, while the band gap reduces from 4.13 to 3.88 eV. It may be attributed to an increase in packing density and grain size, and decrease in oxygen defects.     

Scattering experiments on the structure of concentrated dispersions

 In this work the Couette cell is compared with a more recently constructed disk shear cell. There are distinct advantages of the disk over the Couette cell, in particular, when it comes to the determination of the intensity along certain Bragg rods. Received: 12 December 2000 Accepted: 31 January 2001     

Preparation and characterizations of amorphous nanostructured SiC thin films by low energy pulsed laser deposition

Amorphous silicon carbide (SiC) thin films were deposited on silicon substrates by pulsed laser ablation at room temperature. Thicknesses and surface morphology of the thin films were characterized using optical profilers, atomic force and field emission scanning electron microscopy. Nanohardnes, modulus and scratch resistance properties were determined using XP nanoindenter. The results show that crack free, smooth and nanostructured thin films can be deposited using low laser energy densities.